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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage
PINNING (see Fig.2 ) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PFM) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -6 -12 -0.6 55 150 -55~150 ae ae UNIT V V V A A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5A;IB=-0.5 A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 55 35 30 290 MIN -80 TYP.
2SA1803
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V
-2.0 -1.5 -5 -5 160 |I |I
V V A A
MHz pF
hFE-1 classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1803
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
4


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